Device applications of epitaxial graphene on silicon carbide
نویسندگان
چکیده
منابع مشابه
Epitaxial graphene on silicon carbide: Introduction to structured graphene
We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remain...
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We grew graphene epitaxially on 6H-SiC(0001) substrate by the simulated annealing method. The mechanisms that govern the growth process were investigated by testing two empirical potentials, namely, the widely used Tersoff potential [J. Tersoff, Phys. Rev. B 39, 5566 (1989)] and its more refined version published years later by Erhart and Albe [Phys. Rev. B 71, 035211 (2005)]. Upon contrasting ...
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ژورنال
عنوان ژورنال: Vacuum
سال: 2016
ISSN: 0042-207X
DOI: 10.1016/j.vacuum.2016.03.027